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BU508AT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU508AT
Description  Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min)
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU508AT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU508AT Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU508AT Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BU508AT
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min)
·High Power Dissipation-
: PD= 100W@TC= 25℃
APPLICATIONS
·Designed for use in large screen color deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
8
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.2
℃/W


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