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BUY57 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUY57
Description  Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUY57 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUY57 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUY57 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BUY57
DESCRIPTION
·
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 125V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.3V@ IC= 10A
APPLICATIONS
·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
150
V
VCES
Collector-Emitter Voltage
150
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@TC≤25℃
117
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.28
℃/W


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