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CSFL101 Datasheet(PDF) 2 Page - Comchip Technology

Part # CSFL101
Description  SMD Super Fast Recovery Rectifier
PDF  2 Pages
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Manufacturer  COMCHIP [Comchip Technology]
Direct Link  http://www.comchiptech.com
Logo COMCHIP - Comchip Technology

CSFL101 Datasheet(HTML) 2 Page - Comchip Technology

  CSFL101 Datasheet HTML 1Page - Comchip Technology CSFL101 Datasheet HTML 2Page - Comchip Technology  
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Rating and Characteristic Curves (CSFL101 Thru CSFL105)
Forward Voltage (V)
Fig.2 - Forward Characteristics
MDS0210016B
Page 2
SMD Super Fast Recovery Rectifier
SMD Super Fast Recovery Rectifier
Fig. 6 - Current Derating Curve
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
10
1.0
0.1
0.01
0.001
Single Phase
Half Wave 60Hz
Ambient Temperature ( C)
0
25
50
75
100
125
150
175
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
100
Fig. 3 - Junction Capacitance
Reverse Voltage (V)
14
12
10
8
6
4
2
0
Tj=25 C
Fig. 1 - Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0
20
40
60
80
100
120
140
1000
100
10
1.0
0.1
Tj=125 C
Tj=75 C
Tj=25 C
0
0.2
0. 4
0.6
0.8
1.0
1.2
1.4
CSFL101-103
Tj=25 C
Pulse width 300uS
4% duty cycle
CSFL104
CSFL105
Fig. 4 - Non Repetitive Forward
Surge Current
30
25
20
15
10
5
0
1
5
10
50
1 00
8.3mS Single Half Sine
Wave JEDEC methode
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
www.comchiptech.com
COMCHIP
COMCHIP



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