1.Gate 2. Drain 3. Source

2

1

2

3

1

3

D-PAK

I-PAK

HFD2N65F

HFU2N65F

* When mounted on the minimum pad size recommended (PCB Mount)

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 6.5 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HFD2N65F / HFU2N65F

600V N-Channel MOSFET

July 2015

BV

R

DS(on) typ

I

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

2.98

/W

R

JA

Junction-to-Ambient*

--

50

R

JA

Junction-to-Ambient

--

110

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

2

A

Drain Current

– Continuous (T

)

1.3

A

I

DM

Drain Current

– Pulsed

(Note 1)

8

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

110

mJ

I

AR

Avalanche Current

(Note 1)

2

A

E

AR

Repetitive Avalanche Energy

(Note 1)

4.2

mJ

P

D

Power Dissipation (T

)

2.5

W

Power Dissipation (T

)

- Derate above 25

42

W

0.34

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300