HFD2N90 datasheet(3/9 Pages) SEMIHOW

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-1

300

600

900

1200

1500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

1. V

GS = 0V

SD, Source-Drain voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

GS, Gate-Source Voltage [V]

DS = 450V

DS = 180V

DS = 720V

* Note : I

D = 2.2A

G, Total Gate Charge [nC]

012

3456

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

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