 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
CTL0642NS-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
|
|
|||||||||||||||||||||||||||||
CTL0642NS-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
|
|
1 / 11 page  CT Micro Rev 2 Proprietary & Confidential Page 1 Jun, 2015 CTL0642NS-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 17m Ω, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20m Ω, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25m Ω, at VGS= 1.8V, IDS= 5.0A • Continuous Drain Current at TA=25℃ ID = 6.4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Power Management • Battery Powered System • Portable Equipment • DC/DC Converter Description The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Gate Source Drain Gate Drain Source |
Similar Part No. - CTL0642NS-R3 |
|
Similar Description - CTL0642NS-R3 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
