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CTLM17NS10-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation

Part # CTLM17NS10-R3
Description  N-Channel Enhancement MOSFET
PDF  11 Pages
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Manufacturer  CTMICRO [CT Micro International Corporation]
Direct Link  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CTLM17NS10-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation

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CT Micro
Rev 1
Proprietary & Confidential
Page 1
Jun, 2015
CTLM17NS10-R3
N-Channel Enhancement MOSFET
Package Outline
Schematic
Features
••••
Drain-Source Breakdown Voltage VDSS 100 V
••••
Drain-Source On-Resistance
RDS(ON) 3
Ω, at VGS= 10V, ID= 100mA
RDS(ON) 3
Ω, at VGS= 4.5V, ID= 100mA
••••
Continuous Drain Current at TA=25
℃ID =0.17A
••••
Advanced high cell density Trench Technology
••••
RoHS Compliance & Halogen Free
Applications
••••
Power Management
••••
LCD Display inverter
••••
DC/DC Converter
••••
Load Switch
Description
The CTLM17NS10-R3 is the N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance.
Gate
Source
Drain
Gate
Drain
Source


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