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CDBD835L Datasheet(PDF) 1 Page - Comchip Technology |
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CDBD835L Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 2 page ![]() Reverse Voltage: 35 Volts Forward Current: 8.0 Amp CDBD835L Features Lead formed for surface mount Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Low Switching Noise Low forward voltage drop Mechanical data Case: TO-252AA molded plastic Terminals: solderable per MIL-STD-750, method 2026 Mounting position: Any Approx. Weight: 0.295 gram SMD Schottky Barrier Rectifier SMD Schottky Barrier Rectifier www.comchip.com.tw COMCHIP COMCHIP Maximum Ratings and Electrical Characterics MDS0211012A Page 1 Parameter Max.Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Average Rectifier Forward Current (Note 1) Peak Repetitive Foward Current (at Rated VR, Square Wave, 20KHz, Tc=80 C) Max. Instantaneous Forward Current at 8.0 A (Note 2) Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 Ta=100 Max. Thermal Resistance (Note 3) Operating Junction temperature Storage Temperature Symbol VRRM VDC VRMS IFSM IF(AV) IFRM V F I R R JA R JC T j TSTG Unit V V V A A A V A C/W Note 1. Total deviceRated Vp at Tc=100 C 2. Pulse width = 300uS, duty cycle less than 2%. 3. Thermal resistance from junction to ambient and junction to case mounted on minimum pad size recommended CDBD835 35 35 24.5 75 8.0 0.5 -65 to +125 80 6.0 1.4 -65 to +150 35 C C A 5.40 5.60 B 6.30 6.70 C 2.20 2.40 D 5.20 5.50 E 8.00 10.00 F 6.60 7.00 G 2.40 3.00 H 0.90 1.50 I 0.45 0.55 J 0.45 0.60 K 0.90 1.50 L 0.70 0.90 M 0.50 0.70 N 0.60 0.90 P 2.70 3.10 Q 5.00 5.40 S 4.80 5.20 T 2.30 V 1.20 1.40 X 0.80 1.20 DIM Min. Max. Unit: Millmeters TO-252AA (D-PAK) 2 16 C C |
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Similar Description - CDBD835L |
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