NP16N06QLK datasheet(2/9 Pages) RENESAS

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NP16N06QLK

R07DS1290EJ0101 Rev.1.01

Page 2 of 7

Oct 27, 2015

Absolute Maximum Ratings

(TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

Drain Current (DC) (TC = 25°C) ∗

ID(DC)

±16

Drain Current (pulse) ∗

1, 4

ID(pulse)

±32

Total Power Dissipation (TC = 25°C) ∗

PT1

Total Power Dissipation (TA = 25°C) ∗

2, 4

PT2

1.0

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Repetitive Avalanche Current ∗

IAR

Repetitive Avalanche Energy ∗

EAR

Thermal Resistance

Channel to Case Thermal Resistance

Rth(ch-C)

5.95

°C/W

Channel to Ambient Thermal Resistance ∗

Rth(ch-A)

150

°C/W

Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%

*2. Mounted on glass epoxy substrate of 40 mm

× 40 mm × 1.6 mmt with 4% copper area (35 μm)

*3. RG = 25 Ω, VGS = 20 V → 0 V

*4. One channel operation

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