G3SBA20, G3SBA60, G3SBA80

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Vishay General Semiconductor

Revision: 27-Sep-13

3

Document Number: 88606

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

1

10

100

0.1

10

1

100

Reverse Voltage (V)

0.1

1

10

100

0.01

0.1

10

1

100

t - Heating Time (s)

Case Style GBU

Polarity shown on front side of case, positive lead by beveled corner

0.125 (3.2) x 45°

Chamfer

0.085 (2.16)

0.065 (1.65)

0.020 R (TYP.)

0.880 (22.3)

0.860 (21.8)

0.160 (4.1)

0.140 (3.5)

0.075

(1.9) R

.

0.080 (2.03)

0.060 (1.52)

0.043 (1.10)

0.035 (0.90)

0.080 (2.03)

0.065(1.65)

0.210 (5.33)

0.190 (4.83)

0.140 (3.56)

0.130 (3.30)

9° TYP.

5° TYP.

0.022 (0.56)

0.018 (0.46)

0.310 (7.9)

0.290 (7.4)

0.740 (18.8)

0.720 (18.3)

0.710 (18.0)

0.690 (17.5)

0.100 (2.54)

0.085 (2.16)

0.085 (2.16)

0.075 (1.90)