BUY78 datasheet(2/2 Pages) ISC

Part #	BUY78

Description	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 300V(Min.)

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistors

BUY78

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 0.1A; IB= 0

300

V(BR)CES

Collector-Emitter Breakdown Voltage

IC= 1mA; IE= 0

600

V(BR)CEV

Collector-Emitter Breakdown Voltage

IC= 1mA; VBE= -3.5V

600

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1.25A

1.4

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1.25A

1.7

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

1.0

ICES

Collector Cutoff Current

VCE= 400V; VBE= 0; TC= 150℃

hFE

DC Current Gain

IC= 5A; VCE= 1.5V

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

Fall Time

IC= 3A; IB1= -IB2= 0.6A

1.0

μs

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