IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYN100N65A3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

32

52

S

C

ies

4920

pF

C

oes

V

290

pF

C

res

100

pF

Q

g(on)

166

nC

Q

ge

I

35

nC

Q

gc

73

nC

t

d(on)

30

ns

t

ri

39

ns

E

on

2.0

mJ

t

d(off)

155

ns

t

fi

122

ns

E

off

1.6

mJ

t

d(on)

28

ns

t

ri

40

ns

E

on

2.6

mJ

t

d(off)

200

ns

t

fi

160

ns

E

off

2.4

mJ

R

thJC

0.25 °C/W

R

thCS

0.05

°C/W

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Inductive load, T



V

Note 2

Inductive load, T

I

V

Note 2

SOT-227B miniBLOC (IXYN)

PRELIMANARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.