IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYP10N65B3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

4.0

6.8

S

C

415

pF

C

oes

V

43

pF

C

res

10

pF

Q

g(on)

20

nC

Q

ge

I

3

nC

Q

gc

8

nC

t

d(on)

17

ns

t

ri

29

ns

E

on

0.30

mJ

t

d(off)

125

ns

t

fi

30

ns

E

0.20

mJ

t

d(on)

19

ns

t

ri

35

ns

E

on

0.60

mJ

t

d(off)

147

ns

t

fi

116

ns

E

off

0.36

mJ

R

thJC

0.94 °C/W

R

thCS

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-220 Outline

Reverse Diode (FRED)

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

3.0

V

T

1.6

V

I

RM

6.3

A

t

rr

170

ns

R

thJC

2.30 °C/W

I

-di