DMN3190LDW datasheet(2/5 Pages) DIODES

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DMN3190LDW

Document number: DS36192 Rev. 4 - 2

2 of 5

www.diodes.com

September 2013

DMN3190LDW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

1000

900

T < 5s

TA = +25°C

TA = +70°C

1300

1000

Maximum Continuous Body Diode Forward Current (Note 5)

0.5

Pulsed Drain Current (10µs pulse, duty cycle=1%)

IDM

2.0

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.32

TA = +70°C

0.19

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

395

°C/W

T < 5s

320

Total Power Dissipation (Note 6)

TA = +25°C

0.4

TA = +70°C

0.25

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

320

°C/W

T < 5s

250

Thermal Resistance, Junction to Case

RθJC

143

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current

@TC = +25°C

IDSS

—

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

1.5

—

2.8

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

122

190

mΩ

VGS = 10V, ID = 1.3A

—

181

335

VGS = 4.5V, ID = 290mA

Forward Transfer Admittance

|Yfs|

—

0.7

—

VDS = 10V, ID = 250mA

Diode Forward Voltage

VSD

—

1.2

VGS = 0V, IS = 250mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

VDS = 20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

69.8

—

Ω

f = 1MHz , VGS = 0V, VDS = 0V

Total Gate Charge (VGS = 4.5V)

—

0.9

—

VDS = 10V, ID = 250mA

Total Gate Charge (VGS = 10V)

—

2.0

—

Gate-Source Charge

Qgs

—

0.3

—

Gate-Drain Charge

Qgd

—

0.3

—

Turn-On Delay Time

tD(on)

—

4.5

—

VDD = 30V, VGS = 10V,

RG = 10Ω, ID = 100mA

Turn-On Rise Time

—

8.9

—

Turn-Off Delay Time

tD(off)

—

30.3

—

Turn-Off Fall Time

—

15.6

—

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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