DMN10H099SFG datasheet(4/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated

DMN10H1099SFG

Document number: DS36371 Rev. 2 - 2

4 of 6

www.diodes.com

January 2014

DMN10H099SFG

0.03

0.06

0.09

0.12

0.15

-50

-25

100 125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature



V= 5V

I = 1.0A

I= 5A

1.3

1.6

1.9

2.2

2.5

-50

-25

100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature



I= 1mA

I = 250µA

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

T = 150°C

T = 125°C

T= 85°C

T= 25°C

T = -55°C

100

1000

10000

25 30

40 45

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

Ciss

Coss

Crss

f = 1MHz

Q(nC)

g, TOTAL GATE CHARGE

Figure 11 Gate Charge

= 50V

3.3

0.001

0.01

0.1

100

0.1

100

1000

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

Limited

DS(on)

= 150°C

T = 25°C

J(max)

Single Pulse

DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 20ms

P = 10ms

P = 1ms

P = 100µs

P = 20ms

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