DMN2050LFDB datasheet(2/6 Pages) DIODES

2 / 6 page

DMN2050LFDB

Document number: DS36473 Rev. 2 - 2

2 of 6

www.diodes.com

September 2013

DMN2050LFDB

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±12

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

3.3

2.6

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

TA = +25°C

TA = +70°C

4.5

3.6

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

IDM

Avalanche Current (Note 7) L = 0.1mH

IAR

Repetitive Avalanche Energy (Note 7) L = 0.1mH

EAR

4.5

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.73

TA = +70°C

0.46

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

173

°C/W

t<10s

110

Total Power Dissipation (Note 6)

TA = +25°C

1.42

TA = +70°C

0.90

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

–

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

–

1.0

μA

VDS = 16V, VGS = 0V

Gate-Source Leakage

IGSS

–

±100

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

0.4

–

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

–

mΩ

VGS = 4.5V, ID = 5.0A

–

VGS = 2.5V, ID = 4.2A

Forward Transfer Admittance

|Yfs|

–

VDS = 5V, ID = 5A

Diode Forward Voltage

VSD

–

0.75

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

–

389

–

VDS = 10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

–

Reverse Transfer Capacitance

Crss

–

Gate Resistance

–

2.1

–

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

–

5.7

–

VDS = 15V, ID = 5.8A

Total Gate Charge (VGS = 10V)

–

Gate-Source Charge

Qgs

–

0.7

–

Gate-Drain Charge

Qgd

–

1.5

–

Turn-On Delay Time

tD(on)

–

VDS = 10V, VGS = 4.5V,

RG = 6Ω, IDS = 1A

Turn-On Rise Time

–

Turn-Off Delay Time

tD(off)

–

Turn-Off Fall Time

–

Reverse Recovery Time

trr

–

8.5

–

IF = 5A, di/dt = 100A/μs

Reverse Recovery Charge

Qrr

–

2.1

–

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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