DMN53D0U

Document number: DS37098 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN53D0U

Characteristic

Symbol

Value

Unit

Drain Source Voltage

50

V

Gate-Source Voltage

Continuous

±12

V

Drain Current (Note 5)

Continuous

Pulsed

300

500

mA

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

520

mW

Thermal Resistance, Junction to Ambient (Note 5)

246

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

50

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

µA

Gate-Body Leakage

⎯

⎯

±10

µA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.4

⎯

1.0

V

Static Drain-Source On-Resistance

⎯

⎯

⎯

⎯

⎯

⎯

2.0

2.5

3.0

Ω

Source-Drain Diode Forward Voltage

⎯

⎯

1.4

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

⎯

37.1

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

8.4

⎯

pF

Reverse Transfer Capacitance

⎯

4.0

⎯

pF

Total Gate Charge

⎯

0.6

⎯

nC

Gate-Source Charge

⎯

0.1

⎯

nC

Gate-Drain Charge

⎯

0.1

⎯

nC

Turn-On Delay Time

⎯

2.1

⎯

ns

Turn-On Rise Time

⎯

2.8

⎯

ns

Turn-Off Delay Time

⎯

21

⎯

ns

Turn-Off Fall Time

⎯

14

⎯

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.