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DMN65D8LDW Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN65D8LDW Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 6 page ![]() DMN65D8LDW Document number: DS35500 Rev. 8 - 2 1 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) Package ID TA = +25°C 60V 8 Ω @ VGS = 5V SOT363 170mA 6 Ω @ VGS = 10V 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT363 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMN65D8LDW-7 SOT363 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony- free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information Date Code Key Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code U V W X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT363 Top View Top View Internal Schematic S 1 D 1 D 2 S 2 G 1 G 2 MM1 YM ESD PROTECTED TO 1kV e3 MM1 YM MM1= Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) |
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