DMN62D1LFD

Document number: DS36359 Rev. 1 - 2

4 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMN62D1LFD

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

0

0.5

1

1.5

2

2.5

-50

-25

0

25

50

75

100

125

150

V=

V

I = 100mA

GS

D

2.5

V= V

I = 200mA

GS

D

4

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

0

0.2

0.4

0.6

0.8

1

1.2

-50-25

0

25

50

75100

125 150

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

0.1

0.2

0.3

0.4

0.5

0

0.3

0.6

0.9

1.2

1.5

T = 125°C

A

T = 150°C

A

T = -55°C

A

T= 25°C

A

T= 85°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

1

10

100

0

10

203040

f = 1MHz

Q(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V

= 10V

I=

A

DS

D

250m

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

0.001

0.01

0.1

1

0.1

1

10

100

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P= 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150°C

T = 25°C

V

= 4.5V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board