DMN62D0LFD-13 datasheet(2/6 Pages) DIODES

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DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

DMN62D0LFD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 5) VGS = 4.0V

TA = +25°C

TA = +70°C

310

260

Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)

IDM

1.0

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 5)

0.48

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)

RθJA

265

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

1.0

μA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±5V, VDS = 0V

—

±500

VGS = ±10V, VDS = 0V

—

±2.0

μA

VGS = ±15V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

0.6

—

1.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

1.3

Ω

VGS = 4V, ID = 100mA

—

1.4

2.5

VGS = 2.5V, ID = 50mA

—

1.8

VGS = 1.8V, ID = 50mA

—

2.4

—

VGS = 1.5V, ID = 10mA

Forward Transfer Admittance

|Yfs|

—

1.8

—

VDS = 10V, ID = 200mA

Diode Forward Voltage

VSD

—

0.8

1.3

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

4.3

—

Reverse Transfer Capacitance

Crss

—

3.0

—

Gate Resistance

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

0.5

—

VGS = 4.5V, VDS = 10V,

ID = 250mA

Gate-Source Charge

Qgs

—

0.09

—

Gate-Drain Charge

Qgd

—

0.07

—

Turn-On Delay Time

tD(on)

—

2.6

—

VGS = 10V, VDS = 30V,

RL = 150Ω, RG = 25Ω,

ID = 200mA

Turn-On Rise Time

—

2.1

—

Turn-Off Delay Time

tD(off)

—

Turn-Off Fall Time

—

8.7

—

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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