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DT430 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DT430 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor DT430 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) · High DC Current Gain : hFE= 2000(Min.)@ IC= 4A · Low Collector Saturation Voltage : VCE(sat)= 3.0V(Max.)@ IC= 6A APPLICATIONS · Switching for dynamotor excitation · General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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