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DMN6070SSD Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN6070SSD Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN6070SSD Document number: DS36342 Rev. 3 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN6070SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 3.3 2.6 A t<10s TA = +25°C TA = +70°C ID 4.1 3.4 A Maximum Continuous Body Diode Forward Current (Note 5) IS 2.0 A Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 12 A Avalanche Current (Note 7) L=0.1mH IAS 10 A Avalanche Energy (Note 7) L=0.1mH EAS 5.9 mJ Thermal Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 1.2 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 104 °C/W t<10s 61 Total Power Dissipation (Note 6) PD 1.5 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 83 °C/W t<10s 50 Thermal Resistance, Junction to Case RθJC 14.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA= +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS= 60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±16V, VDS= 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS Static Drain-Source On-Resistance RDS (ON) ⎯ 68 80 mΩ VGS= 10V, ID= 4.5A 70 100 VGS= 4.5V, ID= 3.5A Diode Forward Voltage VSD ⎯ 0.75 1.1 V IS= 12A, VGS= 0V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 588 ⎯ pF VDS= 30V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 26.5 ⎯ Reverse Transfer Capacitance Crss ⎯ 20 ⎯ Gate Resistance Rg ⎯ 1.5 ⎯ Ω Vgs= 0V, Vds= 0V, f=1MHz, Total Gate Charge (VGS= 4.5V) Qg ⎯ 5.6 ⎯ nC VDS= 30V, ID= 3A Total Gate Charge (VGS= 10V) Qg ⎯ 12.3 ⎯ Gate-Source Charge Qgs ⎯ 1.7 ⎯ Gate-Drain Charge Qgd ⎯ 1.9 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ nS VDD= 30V, VGS= 10V RL ≅ 50Ω, RG ≅ 20Ω Turn-On Rise Time tr ⎯ 4.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 35 ⎯ Turn-Off Fall Time tf ⎯ 11 ⎯ Body Diode Reverse Recovery Time trr — 18 — nS IS = 12A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 12 — nC IS = 12A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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