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DMNH10H028SCT Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMNH10H028SCT
Description  Low Input Capacitance
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH10H028SCT Datasheet(HTML) 4 Page - Diodes Incorporated

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DMNH10H028SCT
Document number: DS38674 Rev. 2 - 2
4 of 7
www.diodes.com
April 2016
© Diodes Incorporated
DMNH10H028SCT
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0.055
0.06
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 10V, ID = 20A
V
GS = 10V, ID = 10A
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
A = -55
oC
T
A = 25
oC
T
A = 85
oC
T
A = 125
oC
T
A = 150
oC
T
A = 175
oC
V
GS = 0V
10
100
1000
10000
0
10
20
30
40
50
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g (nC)
Figure 11. Gate Charge
V
DS = 50V, ID = 20A
0.1
1
10
100
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=175℃
T
C=25℃
Single Pulse
DUT on Infinite Heatsink
V
GS=10V
R
DS(ON)
Limited
P
W =1s
P
W =100ms
P
W =10ms
P
W =1ms
P
W =100µs



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