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IRF237 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF237 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF237 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 275 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=4.1A 0.68 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=275V; VGS=0 250 uA VSD Diode Forward Voltage IS=6.5A; VGS=0 2.0 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 600 pF Crss Reverse Transfer Capacitance 52 Coss Output Capacitance 180 tr Rise Time RGS=15Ω ID=5A; VDD=90V; RL=15Ω 23 35 ns td(on) Turn-on Delay Time 9.1 14 tf Fall Time 19 29 td(off) Turn-off Delay Time 31 47 PDF pdfFactory Pro www.fineprint.cn |
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