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MMBR901L Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMBR901L Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN RF Transistor MMBR901L DESCRIPTION · Low Noise · High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS · Designed for use in high gain ,low noise , small signal amplifiers for operation up to 2.5GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 30 mA PC Collector Power Dissipation @TC= 75℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - MMBR901L |
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Similar Description - MMBR901L |
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