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MMBR911L Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MMBR911L
Description  isc Silicon NPN RF Transistor
PDF  5 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MMBR911L Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  MMBR911L Datasheet HTML 1Page - Inchange Semiconductor Company Limited MMBR911L Datasheet HTML 2Page - Inchange Semiconductor Company Limited MMBR911L Datasheet HTML 3Page - Inchange Semiconductor Company Limited MMBR911L Datasheet HTML 4Page - Inchange Semiconductor Company Limited MMBR911L Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc RF Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN RF Transistor
MMBR911L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA ; IB= 0
12
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
20
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
2
V
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.05
μ
A
hFE
DC Current Gain
IC= 30mA ; VCE= 10V
30
200
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
1.0
pF
fT
Current-Gain—Bandwidth Product
IC= 30mA ; VCE= 10V; f= 1GHz
6.0
GHz
GNF
Gain@ Noise Figure
IC= 10mA ; VCE= 10V; f= 0.5GHz
17
dB
GNF
Gain@ Noise Figure
IC= 10mA ; VCE= 10V; f= 1GHz
11
dB
NF
Noise Figure
IC= 10mA ; VCE= 10V; f= 0.5GHz
2.0
dB
NF
Noise Figure
IC= 10mA ; VCE= 10V; f= 1GHz
2.9
dB



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