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BUL741 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL741
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL741 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUL741 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL741 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
1
isc website：www.iscsemi.cn
isc Silicon NPN Power Transistor
BUL741
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 0.7A
APPLICATIONS
·Designed for electronic lamp ballast circuits switch-mode
power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1050
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
15
V
IC
Collector Current-Continuous
2.5
A
ICM
Collector Current-peak
5
A
IB
Base Current-Continuous
1.5
A
IBM
Base Current-peak
3
A
PC
Collector Power Dissipation
TC=25℃
60
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.08
℃/W


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