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U310 Datasheet(PDF) 1 Page - InterFET Corporation |
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U310 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page  01/99 B-67 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. Reverse Gate Source & Reverse Gate Drain Voltage – 25 V Continuous Forward Gate Current 20 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C TOÐ52 Package See Section G for Outline Dimensions Pin Configuration 1 Source, 2 Drain, 3 Gate & Case Surface Mount SMPJ310 At 25°C free air temperature: U310 Process NJ72L Static Electrical Characteristics Min Typ Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 150 pA VGS = – 15V, VDS = ØV – 150 nA VGS = – 15V, VDS = ØV TA = 125°C Gate Source Cutoff Voltage VGS(OFF) – 2.5 – 6 V VDS = 10V, ID = 1 nA Gate Source Forward Voltage VGS(F) 1V VDS = ØV, IG = 10 mA Drain Saturation Current (Pulsed) IDSS 24 60 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics 10 17 mS VDS = 10V, ID = 10 mA f = 1 kHz Common Gate Forward Transconductance gfg 15 mS VDS = 10V, ID = 10 mA f = 105 MHz 14 mS VDS = 10V, ID = 10 mA f = 450 MHz 250 µS VDS = 10V, ID = 10 mA f = 1 kHz Common Gate Output Conductance gog 0.18 µS VDS = 10V, ID = 10 mA f = 105 MHz 0.32 µS VDS = 10V, ID = 10 mA f = 450 MHz Drain Gate Capacitance Cdg 2.5 pF VDS = 10V, VGS = – 10V f = 1 MHz Gate Source Capacitance Cgs 5pF VDS = 10V, VGS = – 10V f = 1 MHz Equivalent Short Circuit ¯eN 10 nV/ √Hz VDS = 10V, ID = 10 mA f = 100 Hz Input Noise Voltage Common Gate Power Gain Gpg 14 16 dB VDS = 10V, ID = 10 mA f = 105 MHz 10 11 dB VDS = 10V, ID = 10 mA f = 450 MHz Noise Figure NF 1.5 2 dB VDS = 10V, ID = 10 mA f = 105 MHz 2.7 3.5 dB VDS = 10V, ID = 10 mA f = 450 MHz ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:33 AM Page B-67 |
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