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BUX45 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUX45
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX45 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX45 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX45 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUX45
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
500
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.125A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
2.0
V
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
1.0
mA
ICEX
Collector Cutoff Current
VCE= 500V;VBE= -1.5V
VCE= 500V;VBE= -1.5V;TC=125℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
15
45
hFE-2
DC Current Gain
IC= 2A; VCE= 4V
8
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 15V
8
MHz
Switching Times
ton
Turn-on Time
IC= 2A; IB1= -IB2=0.4A;VCC= 100V
1.0
μs
ts
Storage Time
5.0
μs
tf
Fall Time
1.2
μs



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