CSD15380F3 datasheet(5/14 Pages) TI1

5 / 14 page

VSD - Source-to-Drain Voltage (V)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.0001

0.001

0.01

0.1

D009

TC = 25°C

TC = 125°C

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

D008

VGS = 2.5 V

VGS = 8.0 V

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

D006

VGS - Gate-to-Source Voltage (V)

400

800

1200

1600

2000

2400

2800

3200

3600

4000

D007

TC = 25°C, I D = 0.1 A

TC = 125°C, I D = 0.1 A

Qg - Gate Charge (nC)

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

D004

VDS - Drain-to-Source Voltage (V)

0.01

0.1

100

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

CSD15380F3

www.ti.com

SLPS579 – MAY 2016

Product Folder Links: CSD15380F3

Submit Documentation Feedback

Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

VDS = 10 V

ID = 0.1 A

Figure 4. Gate Charge

Figure 5. Capacitance

ID = 2.5 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 0.1 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

CSD15380F3 Datasheet(PDF) 5 Page - Texas Instruments

CSD15380F3 Datasheet(HTML) 5 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL