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CSD19534KCS Datasheet(PDF) 1 Page - Texas Instruments |
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CSD19534KCS Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page ![]() VGS - Gate-to-Source Voltage (V) 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 D007 TC = 25°C, I D = 30 A TC = 125°C, I D = 30 A Qg - Gate Charge (nC) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 D004 ID = 30 A VDS = 50 V Gate (Pin 1) Drain (Pin 2) Source (Pin 3) Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19534KCS SLPS530 – JANUARY 2015 CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 100 V • Avalanche Rated Qg Gate Charge Total (10 V) 16.4 nC Qgd Gate Charge Gate-to-Drain 3.3 nC • Pb-Free Terminal Plating VGS = 6 V 16.3 m Ω • RoHS Compliant RDS(on) Drain-to-Source On-Resistance VGS = 10 V 13.7 m Ω • Halogen Free VGS(th) Threshold Voltage 2.8 V • TO-220 Plastic Package Ordering Information(1) 2 Applications Device Package Media Qty Ship • Secondary Side Synchronous Rectifier CSD19534KCS TO-220 Plastic Package Tube 50 Tube • Motor Control (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description Absolute Maximum Ratings This 100 V, 13.7 m Ω, TO-220 NexFET™ power MOSFET is designed to minimize losses in power TA = 25°C VALUE UNIT conversion applications. VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage ±20 V SPACE Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), 54 ID TC = 25°C A Continuous Drain Current (Silicon limited), 38 TC = 100°C IDM Pulsed Drain Current (1) 138 A PD Power Dissipation 118 W TJ, Operating Junction and –55 to 175 °C Tstg Storage Temperature Range Avalanche Energy, single pulse EAS 54 mJ ID = 33 A, L = 0.1 mH, RG = 25 Ω (1) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1% . RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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