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CSD25484F4 Datasheet(PDF) 1 Page - Texas Instruments

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Part # CSD25484F4
Description  20 V P-Channel FemtoFET MOSFET
PDF  15 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD25484F4 Datasheet(HTML) 1 Page - Texas Instruments

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CSD25484F4
SLPS551 – MAY 2015
CSD25484F4 –20 V P-Channel FemtoFET™ MOSFET
1 Features
Product Summary
1
•
Low On Resistance
TA = 25°C
TYPICAL VALUE
UNIT
•
Ultra-Low Qg and Qgd
VDS
Drain-to-Source Voltage
–20
V
•
Low Threshold Voltage
Qg
Gate Charge Total (–4.5 V)
1090
pC
Qgd
Gate Charge Gate-to-Drain
150
pC
•
Ultra-Small Footprint (0402 Case Size)
VGS = –1.8 V
405
m
Ω
–
1.0 mm × 0.6 mm
VGS = –2.5 V
150
m
Ω
Drain-to-Source
•
Ultra-Low Profile
RDS(on)
On-Resistance
VGS = –4.5 V
93
m
Ω
–
0.2 mm Height
VGS = –8.0 V
80
m
Ω
•
Integrated ESD Protection Diode
VGS(th)
Threshold Voltage
–0.95
V
–
Rated >4 kV HBM
–
Rated >2 kV CDM
Ordering Information(1)
Device
Qty
Media
Package
Ship
•
Lead and Halogen Free
7-Inch
•
RoHS Compliant
CSD25484F4
3000
Femto(0402)
Reel
Tape and
1.0 mm × 0.6 mm
Reel
7-Inch
Land Grid Array (LGA)
CSD25484F4T
250
2 Applications
Reel
•
Optimized for Load Switch Applications
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
•
Optimized for General Purpose Switching
Applications
Absolute Maximum Ratings
•
Battery Applications
TA = 25°C
VALUE
UNIT
•
Handheld and Mobile Applications
VDS
Drain-to-Source Voltage
–20
V
VGS
Gate-to-Source Voltage
–12
V
3 Description
ID
Continuous Drain Current(1)
–2.5
A
This 80 m
Ω, –20 V P-Channel FemtoFET™ MOSFET
IDM
Pulsed Drain Current(1)(2)
–22
A
is designed and optimized to minimize the footprint in
Continuous Gate Clamp Current
–35
IG
mA
many
handheld
and
mobile
applications.
This
Pulsed Gate Clamp Current(2)
–350
technology is capable of replacing standard small
PD
Power Dissipation(1)
500
mW
signal MOSFETs while providing at least a 60%
Human Body Model (HBM)
4
kV
ESD
reduction in footprint size.
Rating Charged Device Model (CDM)
2
kV
.
TJ,
Operating Junction and
–55 to 150
°C
Tstg
Storage Temperature Range
Typical Part Dimensions
(1) Typical RθJA = 85°C/W on 1 inch
2
(6.45 cm2), 2 oz.
(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4
PCB.
(2) Pulse duration
≤100 μs, duty cycle ≤1%
Top View
.
.
.
.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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