DMP3036SFG datasheet(2/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated

DMP3036SFG

Document number: DS37038 Rev. 4 - 2

2 of 6

www.diodes.com

January 2015

DMP3036SFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-8.7

-7.0

t<10s

TA = +25°C

TA = +70°C

-12.7

-10.1

Continuous Drain Current (Note 6) VGS = -5V

Steady

State

TA = +25°C

TA = +70°C

-7.2

-5.8

t<10s

TA = +25°C

TA = +70°C

-10.5

-8.4

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

-80

Maximum Continuous Body Diode Forward Current (Note 6)

-3.6

Avalanche Current (Note 7) L=0.3 mH

IAS

-17.5

Avalanche Energy (Note 7) L=0.3 mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.95

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RJA

137

°C/W

t<10s

°C/W

Total Power Dissipation (Note 6)

2.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

t<10s

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

6.14

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

-1.0

μA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0

-2.0

-2.5

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)

Ω

VGS = -10V, ID = -8A

18.4

VGS = -5V, ID = -5A

Diode Forward Voltage

VSD

-0.74

-1.0

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

1931

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

226

Reverse Transfer Capacitance

Crss

168

Gate Resistance

10.9

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge VGS = -5V

8.8

VDS = -15V, VGS = -10V, ID = -10A

Total Gate Charge VGS = -10V

16.5

Gate-Source Charge

Qgs

2.6

Gate-Drain Charge

Qgd

3.6

Turn-On Delay Time

tD(on)

8.2

VGEN = -10V, VDD = -15V,

RGEN = 3Ω, ID = -10A

Turn-On Rise Time

Turn-Off Delay Time

tD(off)

Turn-Off Fall Time

31.6

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 0.1mH, starting TA = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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