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T30 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # T30
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

T30 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Darlington Power Transistor
T30
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·
High DC Current Gain-
: hFE= 1000( Min.) @(IC= 3A, VCE= 2V)
·
Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA)
APPLICATIONS
·
Switching for dynamotor excitation.
·
Audio ,regulator and general purpose.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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