DMP3099L

Document number: DS36081 Rev. 3 - 2

2 of 6

www.diodes.com

May 2013

© Diodes Incorporated

DMP3099L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-3.8

-2.9

A

Pulsed Drain Current (Note 6)

-11

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.08

W

115

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

—

—

V

Zero Gate Voltage Drain Current

—

—

-800

nA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.0

—

-2.1

V

Static Drain-Source On-Resistance

—

—

65

99

mΩ

Forward Transfer Admittance

—

3.6

—

S

Diode Forward Voltage (Note 6)

—

—

-1.26

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

563

—

pF

f = 1.0MHz

Output Capacitance

—

48

—

pF

Reverse Transfer Capacitance

—

41

—

pF

Gate Resistance

—

10.3

—

Ω

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge

—

5.2

—

nC

—

11

—

Gate-Source Charge

—

1.7

—

Gate-Drain Charge

—

1.9

—

Turn-On Delay Time

—

4.8

—

ns

Rise Time

—

5.0

—

Turn-Off Delay Time

—

31

—

Fall Time

—

15

—

Notes:

5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.

6. Pulse width

≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.