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DMP6110SSD Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMP6110SSD Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 8 page  DMP6110SSD Document number: DS37798 Rev. 4 - 2 3 of 8 www.diodes.com June 2016 © Diodes Incorporated DMP6110SSD Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS -1 μA VDS = -48V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage VGS(TH) -1 -3 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) 105 m Ω VGS = -10V, ID = -4.5A 130 VGS = -4.5V, ID =-3.5A Diode Forward Voltage VSD -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance CISS 969 pF VDS = -30V, VGS = 0V, f = 1.0MHz Output Capacitance COSS 57 pF Reverse Transfer Capacitance CRSS 44 pF Gate Resistance RG 13.7 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) QG 8.2 nC VDS = -30V, ID = -12A Total Gate Charge (VGS = -10V) QG 17.2 nC VDS = -30V, ID = -12A Gate-Source Charge QGS 3.0 nC Gate-Drain Charge QGD 3.1 nC Turn-On Delay Time tD(ON) 4.4 ns VGS = -10V, VDS = -30V, RGEN = 3 Ω, ID=-12A Turn-On Rise Time tR 23 ns Turn-Off Delay Time tD(OFF) 34 ns Turn-Off Fall Time tF 42 ns Body Diode Reverse Recovery Time tRR 13.2 ns IS = -12A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 6.18 nC Notes: 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. |
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