IXD75IF650NA

tentative

-di /dt =

A/µs

T

=

°C

V

CES

V

650

collector emitter voltage

collector emitter saturation voltage

T

= 25°C

collector current

A

75

A

C

VJ

Symbol

Definition

Ratings

typ.

max.

min.

Conditions

Unit

tbd

V

V

CE(sat)

total power dissipation

tbd

W

collector emitter leakage current

6.5

V

turn-on delay time

25

ns

t

reverse bias safe operating area

A

V

20

V

GEM

max. transient gate emitter voltage

T

=

°C

C

V

P

tot

gate emitter threshold voltage

RBSOA

150

tbd

T

=

°C

T

=

°C

VJ

V

max. DC gate voltage

I

C25

I

C

T

=

25°C

VJ

I =

A; V = 15 V

CGE

T

= 25°C

VJ

V

GE(th)

I

CES

I =

mA; V = V

CGE

CE

V = V

; V = 0 V

CE

CES

GE

I

GES

T

= 25°C

VJ

gate emitter leakage current

V

= ±20 V

GE

1.7

1.75

5.8

5

mA

0.1

mA

0.1

500

G(on)

total gate charge

V =

V; V = 15 V; I =

A

CE

Q

GE

C

130

nC

t

t

t

E

E

d(on)

r

d(off)

f

on

off

45

ns

120

ns

40

ns

1.1

mJ

1.7

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V

=

V; I =

A

V

= ±15 V; R =

Ω

CE

C

GE

G

V

= ±15 V; R =

Ω

GE

G

V

=

V

CEmax

650

short circuit safe operating area

µs

SCSOA

10

T

=

°C

VJ

V

=

V; V = ±15 V

CE

GE

short circuit duration

t

short circuit current

I

SC

SC

R =

Ω; non-repetitive

G

300

A

R

thJC

thermal resistance junction to case

tbd K/W

V

RRM

V

650

max. repetitive reverse voltage

T

= 25°C

VJ

T

= 25°C

forward current

A

tbd

A

C

tbd

T

=

°C

C

I

F25

I

F

T

= 25°C

forward voltage

V

2.00

V

VJ

1.80

T

= 125°C

VJ

I =

A

F

T

= 25°C

reverse current

mA

0.15

mA

VJ

0.75

T

= 125°C

VJ

R

RRM

T

= 125°C

VJ

Q

I

t

rr

RM

rr

7

µC

55

A

100

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I =

A; V = 0 V

F

FGE

E

rec

1.5

mJ

reverse recovery energy

R

R

thJC

thermal resistance junction to case

1 K/W

V = V

T

= 25°C

C

T

= 25°C

VJ

T

=

°C

VJ

VJ

75

1.2

75

75

75

75

10

10

10

300

360

1200

300

I

CM

1.5

thermal resistance case to heatsink

K/W

R

thCH

thermal resistance case to heatsink

K/W

IGBT

Diode

300 V

V

=

V

CEmax

360

100

100

100

100

150

150

150

150

150

nA

0.10

0.10

IXYS reserves the right to change limits, conditions and dimensions.

20131204

Data according to IEC 60747and per semiconductor unless otherwise specified

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