FEATURES

Direct Replacement For SILICONIX U/J/SST308 SERIES

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

NF = 2.7dB

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 150°C

Junction Operating Temperature

-55 to 135°C

Maximum Power Dissipation

Continuous Power Dissipation (J/SST)

350mW

Continuous Power Dissipation (U)

500mW

Maximum Currents

Gate Current (J/SST)

10mA

Gate Current (U)

20mA

Maximum Voltages

Gate to Drain

-25V

Gate to Source

-25V

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

Gate to Source Breakdown Voltage

-25

Gate to Source Forward Voltage

0.7

1

V

Gate Operating Current

-15

pA

Drain to Source On Resistance

35

Ω

Equivalent Noise Voltage

6

nV/√Hz

f = 105MHz

1.5

NF

Noise Figure

f = 450MHz

2.7

f = 105MHz

16

Power Gain

2

f = 450MHz

11.5

dB

f = 105MHz

14

Forward

Transconductance

f = 450MHz

13

f = 105MHz

0.16

Output Conductance

f = 450MHz

0.55

mS

D

S

G

2

1

3

BOTTOM VIEW

TO-18

J SERIES

TO-92

BOTTOM VIEW

123

DS G

SST SERIES

1

2

3

SOT-23

TOP VIEW

D

G

S

Linear Integrated Systems

U/J/SST308

SERIES

SINGLE N-CHANNEL HIGH

FREQUENCY JFET