2N6661 datasheet(2/10 Pages) MICROCHIP

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2N6661

DS20005516A-page 2

 2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS†

Drain-to-source voltage .........................................................................................................................................BVDSS

Drain-to-gate voltage.............................................................................................................................................BVDGS

Gate-to-source voltage............................................................................................................................................ ±20V

Operating and Storage Temperature.......................................................................................................... -55 to 150 °C

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.

2: Specification is obtained by characterization and is not 100% tested.

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at those or any other conditions above those indicated in the

operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods

may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, for all specifications TA = +25°C

Parameter

Symbol

Min

Typ

Max

Units Conditions

DC Parameters (Note 1, unless otherwise stated)

Drain-to-source breakdown voltage

BVDSS

VGS= 0V, ID= 10µA

Gate threshold voltage

VGS(th)

0.8

2.0

VGS= VDS, ID= 1.0mA

VGS(th) change with temperature

∆VGS(th)

--3.8

-5.5

mV/°C VGS= VDS, ID= 1.0mA (Note 2)

Gate body leakage current

IGSS

100

VGS= ±20V, VDS= 0V

Zero gate voltage drain current

IDSS

µA

VGS= 0V, VDS= Max rating

500

VDS= 0.8 Max Rating,

VGS= 0V, TA= 125°C (Note 2)

On-state drain current

ID(ON)

1.5

VGS= 10V, VDS= 10V

Static drain-to-source on-state

resistance

RDS(ON)

5.0

Ω

VGS= 5.0V, ID= 0.3A

4.0

VGS= 10V, ID= 1.0A

AC Parameters (Note 2)

Forward transconductance

GFS

170

mmho VDS= 25V, ID= 0.5A

Input capacitance

CISS

VGS= 0V,

VDS= 24V,

f = 1.0MHz

Common source output capacitance

COSS

Reverse transfer capacitance

CRSS

Turn-on time

t(ON)

VDD= 25V, ID= 1.0A,

RGEN= 25Ω

Turn-off time

t(OFF)

Diode Parameters

Diode forward voltage drop

VSD

-1.2

VGS= 0V, ISD= 1.0A (Note 1)

Reverse recovery time

trr

-350

VGS= 0V, ISD= 1.0A (Note 2)

TEMPERATURE SPECIFICATIONS

Parameter

Symbol

Min

Typ

Max

Units Conditions

Temperature Ranges

Operating and Storage Temperature

-55

–

150

°C

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