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BUV18 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV18 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak 90 A IB Base Current-Continuous 16 A IBM Base Current-Peak 40 A PC Collector Power Dissipation @TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W |
Similar Part No. - BUV18 |
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Similar Description - BUV18 |
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