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BUV46AFI Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV46AFI Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUV46AFI ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.3 V ICER Collector Cutoff Current VCE= 1000V; RBE=10Ω VCE= 1000V; RBE=10Ω;TC=125℃ 0.1 1.0 mA ICEX Collector Cutoff Current VCE= 1000V; VBE=-2.5V VCE= 1000V; VBE=-2.5V;Tj= 125℃ 0.3 2.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA Switching Times ton Turn-on Time IC= 2A; IB1= -IB2= 0.4A; VCC= 150V 1.0 μs ts Storage Time 3.0 μs tf Fall Time 0.8 μs |
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