BUV52 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUV52

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0; L= 25mH

250

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.27A

IC= 4A; IB= 0.27A; TC= 100℃

0.8

0.9

VCE (sat)-2

Collector-Emitter Saturation Voltage

IC= 8A; IB= 0.8A

IC= 8A; IB= 0.8A; TC= 100℃

0.9

1.5

VCE (sat)-3

Collector-Emitter Saturation Voltage

IC= 12A; IB= 1.5A

IC= 12A; IB= 1.5A; TC= 100℃

1.2

1.9

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 8A; IB= 0.8A

IC= 8A; IB= 0.8A; TC= 100℃

1.3

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 12A; IB= 1.5A

IC= 12A; IB= 1.5A; TC= 100℃

1.5

ICER

Collector Cutoff Current

VCE= VCEV; RBE= 10Ω

VCE= VCEV; RBE= 10Ω; TC=100℃

0.5

2.5

ICEV

Collector Cutoff Current

VCE= VCEV; VBE= -1.5V

VCE= VCEV; VBE= -1.5V;TC=100℃

0.5

2.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

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