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MMBD770 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MMBD770 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page  Schottky Barrier Diode MMBD330/MMBD770 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse Breakdown voltage MMBD330 MMBD770 V(BR)R IR=100μA 30 70 V Reverse current MMBD330 MMBD770 IR VR=25V VR=35V 200 200 nA Forward voltage MMBD330 MMBD770 VF IF=1.0mA IF=10mA IF=1.0mA IF=10mA 0.45 0.60 0.50 1.0 V Diode capacitance MMBD330 MMBD770 CD VR=15V,f=1MHz VR=20V,f=1MHz 0.9 0.5 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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