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BAS86 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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BAS86 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page  0 100 200 100 200 0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 0. 01 0. 1 1 10 100 1000 T J =- 4 0 T J = 125 T J =2 5 0 10 20 30 4 0 50 60 0. 0 1 0. 1 1 10 10 0 10 00 T J = 125 10 0 75 50 25 0 5 1 01 5 2 0 2 53 0 2 4 6 8 10 12 14 VF -Forward Voltage(V) TA-Ambient temperature( ) VR-Reverse voltage (V) FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS FIG.4 -- TYPICAL JUNCTION CAPACITANCE VR-Reverse voltage (V) BAS86 FIG.1-- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT TEMPERATURE FIG. 2--TYPICAL INSTANTANEOUS FORWORD CHARACTERISTICS www.diode.kr Diode Semiconductor Korea |
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