2SD1615 datasheet(3/6 Pages) RENESAS

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SILICON TRANSISTOR

2SD1615, 1615A

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DATA SHEET

Document No. D10198EJ5V0DS00 (5th edition)

Date Published March 2006 NS CP(K)

Printed in Japan

1985

DESCRIPTION

2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid

Integrated Circuits.

FEATURES

• Low VCE (sat) VCE(sat) = 0.15 V

• Complement to 2SB1115, 1115A

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

2SD1615 2SD1615A

Collector to Base Voltage

VCBO

120

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

6.0

Collector Current (DC)

IC (DC)

1.0

Collector Current (Pulse)∗

IC (Pulse)

2.0

Total Power Dissipation ∗∗

2.0

Junction Temperature

150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

∗ PW ≤ 10 ms, Duty Cycle ≤ 50%

∗∗ When mounted on ceramic substrate of 16 cm2 × 0.7 mm

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

ICBO

100

2SD1615

VCB = 60 V, IE = 0

100

2SD1615A

VCB = 120 V, IE = 0

Emitter Cutoff Current

IEBO

100

VEB = 6.0 V, IC = 0

DC Current Gain

hFE1∗∗∗

135

290

600

2SC1615

VCE = 2.0 V, IC = 100 mA

135

400

2SD1615A

DC Current Gain

hFE2∗∗∗

270

VCE = 2.0 V, IC = 1.0 A

Collector Saturation Voltage

VCE(sat)∗∗∗

0.15

0.3

IC = 1.0 A, IB = 50 mA

Base Saturation Voltage

VBE(sat)∗∗∗

0.9

1.2

IC = 1.0 A, IB = 50 mA

Base to Emitter Voltage

VBE∗∗∗

600

700

VCE = 2.0 V, IC = 50 mA

Gain Bandwidth Product

160

MHz

VCE = 2.0 V, IE =

−100 mA

Output Capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

∗∗∗ Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2 %

hFE Classification

MARKING

2SD1615

2SD1615A

hFE1

135 to 270

200 to 400

300 to 600

PACKAGE DIMENSIONS

in millimeters

4.5

±0.1

1.6

±0.2

0.42

±0.06

0.42

±0.06

1.5

±0.1

1.5

3.0

0.41

+0.03

− 0.05

E. Emitter

C. Collector

B. Base

0.47

±0.06

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