1SS355

SILICON EPITAXIAL

HIGH SPEED SWITCHING DIODE

Publication Order Number: [1SS355]

Features

• Smal plastic package suitable for surface mounted

design

• High Speed (Trr = 1.2 ns Typ.)

• High reliability with high surge current handling

capability

• RoHS compliant package

Applications

• High speed switching

Description

• Silicon planar zener diode in a small plastic SMD

SOD-323 package

Packing & Order Information

3,000/Reel

Graphic symbol

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless

otherwise specified.)

Parameter

Symbol

Value

Unit

Maximum Peak Reverse Voltage

VRRM

90

V

Maximum DC Reverse Voltage

VRM

80

V

Maximum Average Forward Current

IF

100

mA

Maximum Peak Forward Voltage

IFM

255

mA

Maximum Surge Current (1s)

IFSM

500

mA

Maximum Junction Temperature

TJ

125

°C

Storage temperature range

TS

-55 to +175

°C