MSC39N12 datasheet(2/6 Pages) BWTECH

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MSC39N12

30V N-Channel MOSFETs

Publication Order Number: [MSC39N12]

Absolute Maximum Ratings (TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

Power Dissipation - Derate above 25°C

0.17

W/°C

Operating Junction Temperature Range

-55 to +150

°C

TSTG

Storage Temperature Range

-55 to +150

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Units

RΘjA

Thermal Resistance Junction to ambient

°C/W

RθJC

Thermal Resistance Junction to Case

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = VGS, ID = 250uA

△BV

DSS

△TJ

BVDSS Temperature Coefficient

Reference to 25°C , ID = 1mA

0.04

V/°C

IGSS

Gate-Source Leakage Current

VDS = 0 V , VGS = ±20 V

±100

IDSS

Drain-Source Leakage Current

VDS = 30 V , VGS = 0 V , TJ= 25°C

VDS = 24 V , VGS = 0 V , TJ= 125°C

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 12 A

VGS = 4.5 V , ID = 8 A

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID =-250μA

1.2

1.6

2.5

△V

GS(th)

V GS(th) Temperature Coefficient

VDS = VGS, ID =-250μA

-4

mV/°C

gfs

Forward Tranconductance

VDS = 10 V , IS = 6 A

6.5

Dynamic and switching Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Delay Time

3,4

ID = 1 A , RG = 6 Ω,

VGS = 10 V , VDD = 15 V

2.8

Rise Time

3,4

7.2

td(off)

Turn-Off Delay Time

3,4

15.8

Fall Time

3,4

4.6

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