NTHS5404 datasheet(2/6 Pages) ONSEMI

2 / 6 page

NTHS5404

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Maximum Junction−to−Ambient (Note 2)

v 5 sec

Steady State

RqJA

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

RqJF

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

−

Gate−Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

−

"100

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

−

1.0

VDS = 16 V, VGS = 0 V,

TJ = 85°C

−

5.0

On−State Drain Current (Note 3)

ID(on)

VDS w 5.0 V, VGS = 4.5 V

−

Drain−Source On−State Resistance (Note 3)

rDS(on)

VGS = 4.5 V, ID = 5.2 A

−

0.025

0.030

()

VGS = 2.5 V, ID = 4.3 A

−

0.038

0.045

Forward Transconductance (Note 3)

gfs

VDS = 10 V, ID = 5.2 A

−

Diode Forward Voltage (Note 3)

VSD

IS = 5.2 A, VGS = 0 V

−

0.8

1.2

Dynamic (Note 4)

Total Gate Charge

−

Gate−Source Charge

QGS

VDS = 10 V, VGS = 4.5 V,

ID = 5.2 A

−

2.4

−

Gate−Drain Charge

QGD

ID = 5.2 A

−

3.2

−

Turn−On Delay Time

td(on)

−

Rise Time

VDD = 10 V, RL = 10 W

ID ^ 10A VGEN =45V

−

Turn−Off Delay Time

td(off)

ID ^ 1.0 A, VGEN = 4.5 V,

RG = 6 W

−

Fall Time

−

Source−Drain Reverse Recovery Time

trr

IF = 1.1 A, di/dt = 100 A/ms

−

2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

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