LS101A datasheet(2/4 Pages) VISHAY

2 / 4 page

www.vishay.com

Document Number 85628

Rev. 1.3, 13-Apr-04

VISHAY

LS101A / 101B / 101C

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

on PC board

50 mmx50 mmx1.6 mm

RthJA

320

K/W

Junction temperature

125

°C

Storage temperature range

Tstg

- 65 to + 150

°C

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Reverse Breakdown Voltage

IR = 10 µA

LS101A

V(BR)R

LS101B

V(BR)R

LS101C

V(BR)R

Leakage current

VR = 50 V

LS101A

200

VR = 40 V

LS101B

200

VR = 30 V

LS101C

200

Forward voltage drop

IF = 1 mA

LS101A

0.41

LS101B

0.4

LS101C

0.39

IF = 15 mA

LS101A

LS101B

0.95

LS101C

0.9

Diode capacitance

VR = 0 V, f = 1 MHz

LS101A

2.0

LS101B

2.1

LS101C

2.2

Fig. 1 Reverse Current vs. Reverse Voltage

0.01

0.1

100

5 10 15 20 25 30 35 40 45 50

VR - Reverse V oltage(V)

16204

Tj=25 °C

Tj=50 °C

Tj=75 °C

Tj=100°C

Tj=125°C

Tj=150°C

Fig. 2 Diode Capacitance vs. Reverse Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10 15 20 25 30 35 40 45 50

VR – Reverse Voltage(V)

16205

Tj=25

°C

LS101A Datasheet(PDF) 2 Page - Vishay Siliconix

LS101A Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4

Datasheet Download

Link URL