BUL742 datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 900 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

L = 25 mH

400

BVEBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 1 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

IC = 4 A

IB = 0.8 A

0.5

1.0

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 2 A

IB = 0.4 A

1.5

hFE

∗

DC Current Gain

IC = 250 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 125 V

IC = 0.5 A

IB1 = 45 mA

IB2 = -45 mA

tp = 300

µs

250

µs

Esb

Avalanche Energy

L = 2 mH

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Energy Rating Test Circuit

BUL742

2/5

BUL742 Datasheet(PDF) 2 Page - STMicroelectronics

BUL742 Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Download

Link URL